resistive switching memory

Resistive switching memory devices offer several advantages over the currently used computer memory technology. A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. According to Chua all resistive switching memories including ReRAM, MRAM and phase-change memory meet these criteria and are memristors. The structure comprises of an insulating layer (I) sandwiched between the two metal (M) electrodes. Abstract: Resistive-switching random access memory (RRAM) devices based on filamentary switching are attracting widespread interest for their unique properties, such as high ON-OFF ratio, ultrasteep slope, good endurance, and low-current operation. Here we review the development of in-memory computing using resistive switching devices, where the two-terminal structure of the devices, their resistive switching properties, and direct data processing in the memory can enable area- and energy-efficient computation. A typical resistive memory device is composed of one layer of active materials sandwiched between two conductive electrodes (), displaying different states of current conductivity upon applying a voltage bias , , , , , .A binary state device means that it can switch between a high-resistance (low-conductivity) OFF state and a low-resistance (high-conductivity) ON state in response … The cells have two electrodes, for example made of silver and platinum, at which the ions dissolve and then precipitate again. A resistive random access memory (RRAM) consists of a resistive switching memory cell having a metal-insulator-metal structure generally referred to as MIM structure. This is the first report on switchable diode phenomenon based on conducting organic materials. However, the lack of data for the Lissajous curves over a range of initial conditions or over a range of frequencies complicates assessments of this claim. Researchers from the MIPT… 92,998 science & technology articles A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. The resistive switching characteristics and switching mechanisms of the Au-implanted- ZrO 2 film are extensively investigated for nonvolatile memory applications. We study resistive switching memory phenomena in conducting polymer PEDOT PSS. The memory device shows reproducible and reliable bipolar resistive switching characteristics. This changes the electrical resistance, which can be … In the same film, there are two types of memory behavior coexisting; namely, the switchable diode effect and write once read many memory. 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